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PSMN3R3-80ES,127

PSMN3R3-80ES,127

PSMN3R3-80ES,127

NXP USA Inc.

ELEMENT, NCHANNEL, SILICON, MOSF

compliant

PSMN3R3-80ES,127 Pricing & Ordering

Quantity Unit Price Ext. Price
1,000 $1.84122 -
1415 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 3.3mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 139 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 9961 pF @ 40 V
FET Feature -
Power Dissipation (Max) 338W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package I2PAK
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
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