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PMZB290UNE,315

PMZB290UNE,315

PMZB290UNE,315

NXP USA Inc.

MOSFET N-CH 20V 1A DFN1006B-3

non-compliant

PMZB290UNE,315 Pricing & Ordering

Quantity Unit Price Ext. Price
10,000 $0.07035 -
30,000 $0.06650 -
50,000 $0.05996 -
100,000 $0.05880 -
0 items
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 1A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 380mOhm @ 500mA, 4.5V
Vgs(th) (Max) @ Id 950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs 0.68 nC @ 4.5 V
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 83 pF @ 10 V
FET Feature -
Power Dissipation (Max) 360mW (Ta), 2.7W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package DFN1006B-3
Package / Case SC-101, SOT-883
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