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PMV170UN,215

PMV170UN,215

PMV170UN,215

NXP USA Inc.

MOSFET N-CH 20V 1A TO236AB

non-compliant

PMV170UN,215 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $0.12000 $0.12
500 $0.1188 $59.4
1000 $0.1176 $117.6
1500 $0.1164 $174.6
2000 $0.1152 $230.4
2500 $0.114 $285
33000 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 1A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 165mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 1.65 nC @ 4.5 V
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 83 pF @ 10 V
FET Feature -
Power Dissipation (Max) 325mW (Ta), 1.14W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-23 (TO-236AB)
Package / Case TO-236-3, SC-59, SOT-23-3
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