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PMT29EN,115

PMT29EN,115

PMT29EN,115

NXP USA Inc.

MOSFET N-CH 30V 6A SOT223

compliant

PMT29EN,115 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $0.10000 $0.1
500 $0.099 $49.5
1000 $0.098 $98
1500 $0.097 $145.5
2000 $0.096 $192
2500 $0.095 $237.5
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 29mOhm @ 6A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 11 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 492 pF @ 15 V
FET Feature -
Power Dissipation (Max) 820mW (Ta), 8.33W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SC-73
Package / Case TO-261-4, TO-261AA
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