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PMT200EN,115

PMT200EN,115

PMT200EN,115

NXP USA Inc.

MOSFET N-CH 100V 1.8A SOT223

non-compliant

PMT200EN,115 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $0.07000 $0.07
500 $0.0693 $34.65
1000 $0.0686 $68.6
1500 $0.0679 $101.85
2000 $0.0672 $134.4
2500 $0.0665 $166.25
25828 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 1.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 235mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 10 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 475 pF @ 80 V
FET Feature -
Power Dissipation (Max) 800mW (Ta), 8.3W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SC-73
Package / Case TO-261-4, TO-261AA
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