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PMR780SN115

PMR780SN115

PMR780SN115

NXP USA Inc.

SMALL SIGNAL N-CHANNEL MOSFET

non-compliant

PMR780SN115 Pricing & Ordering

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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 550mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 920mOhm @ 300mA, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 1.05 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 23 pF @ 30 V
FET Feature -
Power Dissipation (Max) 530mW (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SC-75
Package / Case SC-75, SOT-416
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