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PMN80XP,115

PMN80XP,115

PMN80XP,115

NXP USA Inc.

MOSFET P-CH 20V 2.5A 6TSOP

non-compliant

PMN80XP,115 Pricing & Ordering

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3,000 $0.08910 -
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Name Value
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 2.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) -
Rds On (Max) @ Id, Vgs 102mOhm @ 2.5A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 7.5 nC @ 4.5 V
Vgs (Max) ±12V
Input Capacitance (Ciss) (Max) @ Vds 550 pF @ 10 V
FET Feature -
Power Dissipation (Max) 385mW (Ta), 4W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 6-TSOP
Package / Case SC-74, SOT-457
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