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PHU101NQ03LT,127

PHU101NQ03LT,127

PHU101NQ03LT,127

NXP USA Inc.

MOSFET N-CH 30V 75A IPAK

non-compliant

PHU101NQ03LT,127 Pricing & Ordering

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Name Value
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Rds On (Max) @ Id, Vgs 5.5mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 23 nC @ 5 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2180 pF @ 25 V
FET Feature -
Power Dissipation (Max) 166W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package I-Pak
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
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