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NX2301P,215

NX2301P,215

NX2301P,215

NXP Semiconductors

P-CHANNEL 20V 2A (TA) 400MW (TA)

compliant

NX2301P,215 Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $0.08796 -
6,000 $0.08006 -
15,000 $0.07216 -
30,000 $0.06821 -
75,000 $0.06150 -
150,000 $0.05952 -
159000 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 120mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id 1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 6 nC @ 4.5 V
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 380 pF @ 6 V
FET Feature -
Power Dissipation (Max) 400mW (Ta), 2.8W (Tc)
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-236AB
Package / Case TO-236-3, SC-59, SOT-23-3
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