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BUK9E1R6-30E,127

BUK9E1R6-30E,127

BUK9E1R6-30E,127

NXP USA Inc.

MOSFET N-CH 30V 120A I2PAK

compliant

BUK9E1R6-30E,127 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $1.22000 $1.22
500 $1.2078 $603.9
1000 $1.1956 $1195.6
1500 $1.1834 $1775.1
2000 $1.1712 $2342.4
2500 $1.159 $2897.5
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Rds On (Max) @ Id, Vgs 1.4mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 113 nC @ 5 V
Vgs (Max) ±10V
Input Capacitance (Ciss) (Max) @ Vds 16150 pF @ 25 V
FET Feature -
Power Dissipation (Max) 349W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package I2PAK
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
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