Welcome to ichome.com!

logo
Home

BUK661R6-30C118

BUK661R6-30C118

BUK661R6-30C118

NXP USA Inc.

N-CHANNEL POWER MOSFET

compliant

BUK661R6-30C118 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $0.81000 $0.81
500 $0.8019 $400.95
1000 $0.7938 $793.8
1500 $0.7857 $1178.55
2000 $0.7776 $1555.2
2500 $0.7695 $1923.75
3481 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.6mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 2.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 229 nC @ 10 V
Vgs (Max) ±16V
Input Capacitance (Ciss) (Max) @ Vds 14964 pF @ 25 V
FET Feature -
Power Dissipation (Max) 306W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
PDF loading failed, you can try to open in a new window to access [Open], or click to return

Related Part Number

DMP22D6UT-7
IRFL9110TRPBF
FQB19N20CTM
FQB19N20CTM
$0 $/piece
SIHW47N60EF-GE3
FDB6030BL
IRFP32N50KPBF
APT37F50S

Your Reliable Partner In Electronics

Dedicated to exceeding your expectations. IChome: Customer service redefined for the electronics industry.