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BUK653R7-30C,127

BUK653R7-30C,127

BUK653R7-30C,127

NXP USA Inc.

MOSFET N-CH 30V 100A TO220AB

non-compliant

BUK653R7-30C,127 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $0.55000 $0.55
500 $0.5445 $272.25
1000 $0.539 $539
1500 $0.5335 $800.25
2000 $0.528 $1056
2500 $0.5225 $1306.25
5180 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 3.9mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 2.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 78 nC @ 10 V
Vgs (Max) ±16V
Input Capacitance (Ciss) (Max) @ Vds 4707 pF @ 25 V
FET Feature -
Power Dissipation (Max) 158W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
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