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A2G35S200-01SR3

  • A2G35S200-01SR3
  • A2G35S200-01SR3

A2G35S200-01SR3

A2G35S200-01SR3

NXP USA Inc.

AIRFAST RF POWER GAN TRANSISTOR

A2G35S200-01SR3 Datasheet

non-compliant

A2G35S200-01SR3 Pricing & Ordering

Quantity Unit Price Ext. Price
250 $123.43584 $30858.96
160 items
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Name Value
Product Status Active
Transistor Type GaN HEMT
Frequency 3.4GHz ~ 3.6GHz
Gain 16.1dB
Voltage - Test 48 V
Current Rating (Amps) -
Noise Figure -
Current - Test 291 mA
Power - Output 180W
Voltage - Rated 125 V
Package / Case NI-400S-2S
Supplier Device Package NI-400S-2S
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