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2N7000,126

2N7000,126

2N7000,126

NXP USA Inc.

MOSFET N-CH 60V 300MA TO92-3

compliant

2N7000,126 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $0.00000 $0
500 $0 $0
1000 $0 $0
1500 $0 $0
2000 $0 $0
2500 $0 $0
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 300mA (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs -
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 40 pF @ 10 V
FET Feature -
Power Dissipation (Max) 830mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-92-3
Package / Case TO-226-3, TO-92-3 (TO-226AA) Formed Leads
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