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PSMN4R3-80ES,127

PSMN4R3-80ES,127

PSMN4R3-80ES,127

Nexperia USA Inc.

MOSFET N-CH 80V 120A I2PAK

SOT-23

non-compliant

PSMN4R3-80ES,127 Pricing & Ordering

Quantity Unit Price Ext. Price
5,000 $1.39125 -
1000 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 4.3mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 111 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 8161 pF @ 40 V
FET Feature -
Power Dissipation (Max) 306W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package I2PAK
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
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