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PSMN1R0-30YLDX

PSMN1R0-30YLDX

PSMN1R0-30YLDX

Nexperia USA Inc.

MOSFET N-CH 30V 100A LFPAK56

non-compliant

PSMN1R0-30YLDX Pricing & Ordering

Quantity Unit Price Ext. Price
1,500 $0.63756 -
3,000 $0.59506 -
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 1.02mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 2.2V @ 2mA
Gate Charge (Qg) (Max) @ Vgs 121.35 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 8598 pF @ 15 V
FET Feature -
Power Dissipation (Max) 238W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package LFPAK56, Power-SO8
Package / Case SC-100, SOT-669
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