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PMXB360ENEAZ

PMXB360ENEAZ

PMXB360ENEAZ

Nexperia USA Inc.

MOSFET N-CH 80V 1.1A DFN1010D-3

compliant

PMXB360ENEAZ Pricing & Ordering

Quantity Unit Price Ext. Price
5,000 $0.12708 -
10,000 $0.11993 -
25,000 $0.11135 -
50,000 $0.10777 -
8712 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V
Current - Continuous Drain (Id) @ 25°C 1.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 450mOhm @ 1.1A, 10V
Vgs(th) (Max) @ Id 2.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 4.5 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 130 pF @ 40 V
FET Feature -
Power Dissipation (Max) 400mW (Ta), 6.25W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package DFN1010D-3
Package / Case 3-XDFN Exposed Pad
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