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PMV55ENEAR

PMV55ENEAR

PMV55ENEAR

Nexperia USA Inc.

MOSFET N-CH 60V 3.1A TO236AB

non-compliant

PMV55ENEAR Pricing & Ordering

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3,000 $0.13629 -
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 3.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 60mOhm @ 3.1A, 10V
Vgs(th) (Max) @ Id 2.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 19 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 646 pF @ 30 V
FET Feature -
Power Dissipation (Max) 478mW (Ta), 8.36W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-236AB
Package / Case TO-236-3, SC-59, SOT-23-3
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