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PHT6NQ10T,135

PHT6NQ10T,135

PHT6NQ10T,135

Nexperia USA Inc.

MOSFET N-CH 100V 3A SOT223

non-compliant

PHT6NQ10T,135 Pricing & Ordering

Quantity Unit Price Ext. Price
4,000 $0.33210 -
8,000 $0.31230 -
12,000 $0.30240 -
28,000 $0.29700 -
0 items
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 90mOhm @ 3A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 21 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 633 pF @ 25 V
FET Feature -
Power Dissipation (Max) 1.8W (Ta), 8.3W (Tc)
Operating Temperature -65°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-223
Package / Case TO-261-4, TO-261AA
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