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BUK969R3-100E,118

BUK969R3-100E,118

BUK969R3-100E,118

Nexperia USA Inc.

MOSFET N-CH 100V 100A D2PAK

compliant

BUK969R3-100E,118 Pricing & Ordering

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4,800 $0.93236 -
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Rds On (Max) @ Id, Vgs 8.9mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 94.3 nC @ 5 V
Vgs (Max) ±10V
Input Capacitance (Ciss) (Max) @ Vds 11650 pF @ 25 V
FET Feature -
Power Dissipation (Max) 263W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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