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BSP122,115

BSP122,115

BSP122,115

Nexperia USA Inc.

MOSFET N-CH 200V 550MA SOT223

non-compliant

BSP122,115 Pricing & Ordering

Quantity Unit Price Ext. Price
1,000 $0.27136 -
2,000 $0.25024 -
5,000 $0.23616 -
10,000 $0.22208 -
25,000 $0.21222 -
50,000 $0.21120 -
176 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain (Id) @ 25°C 550mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.4V, 10V
Rds On (Max) @ Id, Vgs 2.5Ohm @ 750mA, 10V
Vgs(th) (Max) @ Id 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs -
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 100 pF @ 25 V
FET Feature -
Power Dissipation (Max) 1.5W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-223
Package / Case TO-261-4, TO-261AA
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