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BSH202,215

BSH202,215

BSH202,215

Nexperia USA Inc.

MOSFET P-CH 30V 520MA TO236AB

non-compliant

BSH202,215 Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $0.12390 -
6,000 $0.11730 -
15,000 $0.11070 -
30,000 $0.10278 -
75,000 $0.09948 -
19 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 520mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 900mOhm @ 280mA, 10V
Vgs(th) (Max) @ Id 1.9V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 2.9 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 80 pF @ 24 V
FET Feature -
Power Dissipation (Max) 417mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-236AB
Package / Case TO-236-3, SC-59, SOT-23-3
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