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Name | Value |
---|---|
Product Status | Active |
FET Type | 6 N-Channel (3-Phase Bridge) |
FET Feature | Silicon Carbide (SiC) |
Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
Current - Continuous Drain (Id) @ 25°C | 112A (Tc) |
Rds On (Max) @ Id, Vgs | 33mOhm @ 60A, 20V |
Vgs(th) (Max) @ Id | 3V @ 3mA |
Gate Charge (Qg) (Max) @ Vgs | 408nC @ 20V |
Input Capacitance (Ciss) (Max) @ Vds | 7680pF @ 1000V |
Power - Max | 714W |
Operating Temperature | -40°C ~ 175°C (TJ) |
Mounting Type | Chassis Mount |
Package / Case | SP6 |
Supplier Device Package | SP6 |
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