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APTM100H80FT1G

APTM100H80FT1G

APTM100H80FT1G

MOSFET 4N-CH 1000V 11A SP1

non-compliant

APTM100H80FT1G Pricing & Ordering

Quantity Unit Price Ext. Price
1 $0.00000 $0
500 $0 $0
1000 $0 $0
1500 $0 $0
2000 $0 $0
2500 $0 $0
0 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Obsolete
FET Type 4 N-Channel (Half Bridge)
FET Feature Standard
Drain to Source Voltage (Vdss) 1000V (1kV)
Current - Continuous Drain (Id) @ 25°C 11A
Rds On (Max) @ Id, Vgs 960mOhm @ 9A, 10V
Vgs(th) (Max) @ Id 5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 150nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 3876pF @ 25V
Power - Max 208W
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Chassis Mount
Package / Case SP1
Supplier Device Package SP1
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