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Name | Value |
---|---|
Product Status | Obsolete |
FET Type | N-Channel |
Technology | SiCFET (Silicon Carbide) |
Drain to Source Voltage (Vdss) | 700 V |
Current - Continuous Drain (Id) @ 25°C | 78A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 20V |
Rds On (Max) @ Id, Vgs | 45mOhm @ 60A, 20V |
Vgs(th) (Max) @ Id | 2.4V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 270 nC @ 20 V |
Vgs (Max) | +25V, -10V |
Input Capacitance (Ciss) (Max) @ Vds | 3950 pF @ 700 V |
FET Feature | - |
Power Dissipation (Max) | 273W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Chassis Mount |
Supplier Device Package | SOT-227 (ISOTOP®) |
Package / Case | SOT-227-4, miniBLOC |
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