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TN0110N3-G-P002

TN0110N3-G-P002

TN0110N3-G-P002

MOSFET N-CH 100V 350MA TO92-3

non-compliant

TN0110N3-G-P002 Pricing & Ordering

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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 350mA (Tj)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 3Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 2V @ 500µA
Gate Charge (Qg) (Max) @ Vgs -
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 60 pF @ 25 V
FET Feature -
Power Dissipation (Max) 1W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-92-3
Package / Case TO-226-3, TO-92-3 (TO-226AA)
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