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MSCMC120AM02CT6LIAG

MSCMC120AM02CT6LIAG

MSCMC120AM02CT6LIAG

PM-MOSFET-SIC-SBD~-SP6C LI

non-compliant

MSCMC120AM02CT6LIAG Pricing & Ordering

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Name Value
Product Status Active
FET Type 2 N Channel (Phase Leg)
FET Feature Silicon Carbide (SiC)
Drain to Source Voltage (Vdss) 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C 742A (Tc)
Rds On (Max) @ Id, Vgs 2.85mOhm @ 600A, 20V
Vgs(th) (Max) @ Id 4V @ 180mA
Gate Charge (Qg) (Max) @ Vgs 1932nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds 33500pF @ 1000V
Power - Max 3200W (Tc)
Operating Temperature -40°C ~ 175°C (TJ)
Mounting Type Chassis Mount
Package / Case Module
Supplier Device Package SP6C LI
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