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Name | Value |
---|---|
Product Status | Active |
FET Type | 2 N Channel (Phase Leg) |
FET Feature | Silicon Carbide (SiC) |
Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
Current - Continuous Drain (Id) @ 25°C | 742A (Tc) |
Rds On (Max) @ Id, Vgs | 2.85mOhm @ 600A, 20V |
Vgs(th) (Max) @ Id | 4V @ 180mA |
Gate Charge (Qg) (Max) @ Vgs | 1932nC @ 20V |
Input Capacitance (Ciss) (Max) @ Vds | 33500pF @ 1000V |
Power - Max | 3200W (Tc) |
Operating Temperature | -40°C ~ 175°C (TJ) |
Mounting Type | Chassis Mount |
Package / Case | Module |
Supplier Device Package | SP6C LI |
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