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LND150N3-G-P002

LND150N3-G-P002

LND150N3-G-P002

MOSFET N-CH 500V 30MA TO92-3

compliant

LND150N3-G-P002 Pricing & Ordering

Quantity Unit Price Ext. Price
2,000 $0.39140 -
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V
Current - Continuous Drain (Id) @ 25°C 30mA (Tj)
Drive Voltage (Max Rds On, Min Rds On) 0V
Rds On (Max) @ Id, Vgs 1000Ohm @ 500µA, 0V
Vgs(th) (Max) @ Id -
Gate Charge (Qg) (Max) @ Vgs -
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 10 pF @ 25 V
FET Feature Depletion Mode
Power Dissipation (Max) 740mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-92-3
Package / Case TO-226-3, TO-92-3 (TO-226AA)
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