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Name | Value |
---|---|
Product Status | Active |
FET Type | 2 N Channel (Phase Leg) |
FET Feature | Silicon Carbide (SiC) |
Drain to Source Voltage (Vdss) | 1700V (1.7kV) |
Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
Rds On (Max) @ Id, Vgs | 30mOhm @ 100A, 20V |
Vgs(th) (Max) @ Id | 2.3V @ 5mA (Typ) |
Gate Charge (Qg) (Max) @ Vgs | 380nC @ 20V |
Input Capacitance (Ciss) (Max) @ Vds | 6160pF @ 1000V |
Power - Max | 700W |
Operating Temperature | -40°C ~ 150°C (TJ) |
Mounting Type | Chassis Mount |
Package / Case | SP1 |
Supplier Device Package | SP1 |
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