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VWM200-01P

VWM200-01P

VWM200-01P

IXYS

MOSFET 6N-CH 100V 210A V2

non-compliant

VWM200-01P Pricing & Ordering

Quantity Unit Price Ext. Price
1 $0.00000 $0
500 $0 $0
1000 $0 $0
1500 $0 $0
2000 $0 $0
2500 $0 $0
0 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Obsolete
FET Type 6 N-Channel (3-Phase Bridge)
FET Feature Standard
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 210A
Rds On (Max) @ Id, Vgs 5.2mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 4V @ 2mA
Gate Charge (Qg) (Max) @ Vgs 430nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds -
Power - Max -
Operating Temperature -40°C ~ 175°C (TJ)
Mounting Type Chassis Mount
Package / Case V2-PAK
Supplier Device Package V2-PAK
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