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IXTY1R4N120P-TRL

IXTY1R4N120P-TRL

IXTY1R4N120P-TRL

IXYS

MOSFET N-CH 1200V 1.4A TO252

compliant

IXTY1R4N120P-TRL Pricing & Ordering

Quantity Unit Price Ext. Price
1 $2.08725 $2.08725
500 $2.0663775 $1033.18875
1000 $2.045505 $2045.505
1500 $2.0246325 $3036.94875
2000 $2.00376 $4007.52
2500 $1.9828875 $4957.21875
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1200 V
Current - Continuous Drain (Id) @ 25°C 1.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 13Ohm @ 700mA, 10V
Vgs(th) (Max) @ Id 4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 24.8 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 666 pF @ 25 V
FET Feature -
Power Dissipation (Max) 86W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-252AA
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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