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IXTY1R4N100P

IXTY1R4N100P

IXTY1R4N100P

IXYS

MOSFET N-CH 1000V 1.4A TO252

compliant

IXTY1R4N100P Pricing & Ordering

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70 $1.87500 $131.25
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1000 V
Current - Continuous Drain (Id) @ 25°C 1.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 11Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs 17.8 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 450 pF @ 25 V
FET Feature -
Power Dissipation (Max) 63W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-252AA
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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