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IXTY1N80P

IXTY1N80P

IXTY1N80P

IXYS

MOSFET N-CH 800V 1A TO252

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IXTY1N80P Pricing & Ordering

Quantity Unit Price Ext. Price
70 $1.57500 $110.25
Inventory changes frequently.
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Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V
Current - Continuous Drain (Id) @ 25°C 1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 14Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 4V @ 50µA
Gate Charge (Qg) (Max) @ Vgs 9 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 250 pF @ 25 V
FET Feature -
Power Dissipation (Max) 42W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-252AA
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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