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IXTV22N60P

IXTV22N60P

IXTV22N60P

IXYS

MOSFET N-CH 600V 22A PLUS220

non-compliant

IXTV22N60P Pricing & Ordering

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Name Value
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 22A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 350mOhm @ 11A, 10V
Vgs(th) (Max) @ Id 5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 62 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 3600 pF @ 25 V
FET Feature -
Power Dissipation (Max) 400W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PLUS220
Package / Case TO-220-3, Short Tab
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