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IXTV102N20T

IXTV102N20T

IXTV102N20T

IXYS

MOSFET N-CH 200V 102A PLUS220

non-compliant

IXTV102N20T Pricing & Ordering

Quantity Unit Price Ext. Price
1 $0.00000 $0
500 $0 $0
1000 $0 $0
1500 $0 $0
2000 $0 $0
2500 $0 $0
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Name Value
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain (Id) @ 25°C 102A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 23mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id 4.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 114 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 6800 pF @ 25 V
FET Feature -
Power Dissipation (Max) 750W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package PLUS220
Package / Case TO-220-3, Short Tab
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