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IXTT1N300P3HV

IXTT1N300P3HV

IXTT1N300P3HV

IXYS

MOSFET N-CH 3000V 1A TO268

compliant

IXTT1N300P3HV Pricing & Ordering

Quantity Unit Price Ext. Price
1 $29.00000 $29
30 $24.65000 $739.5
120 $22.91000 $2749.2
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 3000 V
Current - Continuous Drain (Id) @ 25°C 1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 50Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 30.6 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 895 pF @ 25 V
FET Feature -
Power Dissipation (Max) 195W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-268HV (IXTT)
Package / Case TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
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