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IXTR200N10P

IXTR200N10P

IXTR200N10P

IXYS

MOSFET N-CH 100V 120A ISOPLUS247

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IXTR200N10P Pricing & Ordering

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30 $10.45267 $313.5801
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 8mOhm @ 60A, 10V
Vgs(th) (Max) @ Id 5V @ 500µA
Gate Charge (Qg) (Max) @ Vgs 235 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 7600 pF @ 25 V
FET Feature -
Power Dissipation (Max) 300W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package ISOPLUS247™
Package / Case TO-247-3
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