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IXTP2N100P

IXTP2N100P

IXTP2N100P

IXYS

MOSFET N-CH 1000V 2A TO220AB

non-compliant

IXTP2N100P Pricing & Ordering

Quantity Unit Price Ext. Price
1 $2.64000 $2.64
50 $2.12500 $106.25
100 $1.91250 $191.25
500 $1.48750 $743.75
1,000 $1.23250 -
2,500 $1.19000 -
130 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1000 V
Current - Continuous Drain (Id) @ 25°C 2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 7.5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 24.3 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 655 pF @ 25 V
FET Feature -
Power Dissipation (Max) 86W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220-3
Package / Case TO-220-3
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