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IXTP1R6N100D2

IXTP1R6N100D2

IXTP1R6N100D2

IXYS

MOSFET N-CH 1000V 1.6A TO220AB

compliant

IXTP1R6N100D2 Pricing & Ordering

Quantity Unit Price Ext. Price
50 $1.85000 $92.5
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1000 V
Current - Continuous Drain (Id) @ 25°C 1.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 10Ohm @ 800mA, 0V
Vgs(th) (Max) @ Id -
Gate Charge (Qg) (Max) @ Vgs 27 nC @ 5 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 645 pF @ 25 V
FET Feature Depletion Mode
Power Dissipation (Max) 100W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220-3
Package / Case TO-220-3
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