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IXTP1N100P

IXTP1N100P

IXTP1N100P

IXYS

MOSFET N-CH 1000V 1A TO220AB

non-compliant

IXTP1N100P Pricing & Ordering

Quantity Unit Price Ext. Price
50 $1.57500 $78.75
590 items
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1000 V
Current - Continuous Drain (Id) @ 25°C 1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 15Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs 15.5 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 331 pF @ 25 V
FET Feature -
Power Dissipation (Max) 50W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220-3
Package / Case TO-220-3
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