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IXTP12N65X2

IXTP12N65X2

IXTP12N65X2

IXYS

MOSFET N-CH 650V 12A TO220

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IXTP12N65X2 Pricing & Ordering

Quantity Unit Price Ext. Price
50 $2.35000 $117.5
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 300mOhm @ 6A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 17 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 1100 pF @ 25 V
FET Feature -
Power Dissipation (Max) 180W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220
Package / Case TO-220-3
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