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IXTP08N100D2

IXTP08N100D2

IXTP08N100D2

IXYS

MOSFET N-CH 1000V 800MA TO220AB

non-compliant

IXTP08N100D2 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $1.67000 $1.67
50 $1.35000 $67.5
100 $1.21500 $121.5
500 $0.94500 $472.5
1,000 $0.78300 -
2,500 $0.75600 -
0 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1000 V
Current - Continuous Drain (Id) @ 25°C 800mA (Tc)
Drive Voltage (Max Rds On, Min Rds On) -
Rds On (Max) @ Id, Vgs 21Ohm @ 400mA, 0V
Vgs(th) (Max) @ Id -
Gate Charge (Qg) (Max) @ Vgs 14.6 nC @ 5 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 325 pF @ 25 V
FET Feature Depletion Mode
Power Dissipation (Max) 60W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220-3
Package / Case TO-220-3
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