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IXTN660N04T4

IXTN660N04T4

IXTN660N04T4

IXYS

MOSFET N-CH 40V 660A SOT227B

compliant

IXTN660N04T4 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $21.12000 $21.12
10 $19.53600 $195.36
100 $16.68480 $1668.48
500 $14.78400 $7392
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 660A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 0.85mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 860 nC @ 10 V
Vgs (Max) ±15V
Input Capacitance (Ciss) (Max) @ Vds 44000 pF @ 25 V
FET Feature Current Sensing
Power Dissipation (Max) 1040W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Chassis Mount
Supplier Device Package SOT-227B
Package / Case SOT-227-4, miniBLOC
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