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IXTN660N04T4

IXTN660N04T4

IXTN660N04T4

IXYS

MOSFET N-CH 40V 660A SOT227B

non-compliant

IXTN660N04T4 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $21.12000 $21.12
10 $19.53600 $195.36
100 $16.68480 $1668.48
500 $14.78400 $7392
0 items
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 660A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 0.85mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 860 nC @ 10 V
Vgs (Max) ±15V
Input Capacitance (Ciss) (Max) @ Vds 44000 pF @ 25 V
FET Feature Current Sensing
Power Dissipation (Max) 1040W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Chassis Mount
Supplier Device Package SOT-227B
Package / Case SOT-227-4, miniBLOC
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