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IXTH6N100D2

IXTH6N100D2

IXTH6N100D2

IXYS

MOSFET N-CH 1000V 6A TO247

non-compliant

IXTH6N100D2 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $6.30000 $6.3
30 $5.16600 $154.98
120 $4.66200 $559.44
510 $3.90600 $1992.06
1,020 $3.52800 -
0 items
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1000 V
Current - Continuous Drain (Id) @ 25°C 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) -
Rds On (Max) @ Id, Vgs 2.2Ohm @ 3A, 0V
Vgs(th) (Max) @ Id -
Gate Charge (Qg) (Max) @ Vgs 95 nC @ 5 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2650 pF @ 25 V
FET Feature Depletion Mode
Power Dissipation (Max) 300W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247 (IXTH)
Package / Case TO-247-3
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