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IXTH6N100D2

IXTH6N100D2

IXTH6N100D2

IXYS

MOSFET N-CH 1000V 6A TO247

compliant

IXTH6N100D2 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $6.30000 $6.3
30 $5.16600 $154.98
120 $4.66200 $559.44
510 $3.90600 $1992.06
1,020 $3.52800 -
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1000 V
Current - Continuous Drain (Id) @ 25°C 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) -
Rds On (Max) @ Id, Vgs 2.2Ohm @ 3A, 0V
Vgs(th) (Max) @ Id -
Gate Charge (Qg) (Max) @ Vgs 95 nC @ 5 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2650 pF @ 25 V
FET Feature Depletion Mode
Power Dissipation (Max) 300W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247 (IXTH)
Package / Case TO-247-3
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