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IXTH12N100L

IXTH12N100L

IXTH12N100L

IXYS

MOSFET N-CH 1000V 12A TO247

compliant

IXTH12N100L Pricing & Ordering

Quantity Unit Price Ext. Price
30 $13.81967 $414.5901
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1000 V
Current - Continuous Drain (Id) @ 25°C 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 20V
Rds On (Max) @ Id, Vgs 1.3Ohm @ 500mA, 20V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 155 nC @ 20 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 2500 pF @ 25 V
FET Feature -
Power Dissipation (Max) 400W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247 (IXTH)
Package / Case TO-247-3
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