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IXTF200N10T

IXTF200N10T

IXTF200N10T

IXYS

MOSFET N-CH 100V 90A I4PAC

compliant

IXTF200N10T Pricing & Ordering

Quantity Unit Price Ext. Price
25 $6.92920 $173.23
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 7mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 152 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 9400 pF @ 25 V
FET Feature -
Power Dissipation (Max) 156W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package ISOPLUS i4-PAC™
Package / Case i4-Pac™-5
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