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IXTA3N120HV

IXTA3N120HV

IXTA3N120HV

IXYS

MOSFET N-CH 1200V 3A TO263

compliant

IXTA3N120HV Pricing & Ordering

Quantity Unit Price Ext. Price
1 $6.16000 $6.16
50 $4.95000 $247.5
100 $4.51000 $451
500 $3.65200 $1826
1,000 $3.08000 -
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1200 V
Current - Continuous Drain (Id) @ 25°C 3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 4.5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 42 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1100 pF @ 25 V
FET Feature -
Power Dissipation (Max) 200W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-263HV
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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