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IXTA3N100P-TRL

IXTA3N100P-TRL

IXTA3N100P-TRL

IXYS

MOSFET N-CH 1000V 3A TO263

non-compliant

IXTA3N100P-TRL Pricing & Ordering

Quantity Unit Price Ext. Price
1 $2.99829 $2.99829
500 $2.9683071 $1484.15355
1000 $2.9383242 $2938.3242
1500 $2.9083413 $4362.51195
2000 $2.8783584 $5756.7168
2500 $2.8483755 $7120.93875
0 items
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1000 V
Current - Continuous Drain (Id) @ 25°C 3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 4.8Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 36 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1100 pF @ 25 V
FET Feature -
Power Dissipation (Max) 125W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-263 (D2Pak)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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