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IXTA3N100D2

IXTA3N100D2

IXTA3N100D2

IXYS

MOSFET N-CH 1000V 3A TO263

compliant

IXTA3N100D2 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $4.00000 $4
50 $3.21760 $160.88
100 $2.93150 $293.15
500 $2.37380 $1186.9
1,000 $2.00200 -
4 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1000 V
Current - Continuous Drain (Id) @ 25°C 3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) -
Rds On (Max) @ Id, Vgs 5.5Ohm @ 1.5A, 0V
Vgs(th) (Max) @ Id -
Gate Charge (Qg) (Max) @ Vgs 37.5 nC @ 5 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1020 pF @ 25 V
FET Feature Depletion Mode
Power Dissipation (Max) 125W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-263AA
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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