Welcome to ichome.com!

logo
Home

IXTA2R4N120P

IXTA2R4N120P

IXTA2R4N120P

IXYS

MOSFET N-CH 1200V 2.4A TO263

non-compliant

IXTA2R4N120P Pricing & Ordering

Quantity Unit Price Ext. Price
50 $4.23000 $211.5
0 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1200 V
Current - Continuous Drain (Id) @ 25°C 2.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 7.5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 37 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1207 pF @ 25 V
FET Feature -
Power Dissipation (Max) 125W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-263AA
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
PDF loading failed, you can try to open in a new window to access [Open], or click to return

Related Part Number

FQP2N40-F080
FQP2N40-F080
$0 $/piece
IXFP130N15X3
IXFP130N15X3
$0 $/piece
PHD97NQ03LT,118
ECH8310-TL-H
ECH8310-TL-H
$0 $/piece
BFL4036-1E
BFL4036-1E
$0 $/piece
IXTH16N50D2
IXTH16N50D2
$0 $/piece
STB41N40DM6AG
FDZ202P

Your Reliable Partner In Electronics

Dedicated to exceeding your expectations. IChome: Customer service redefined for the electronics industry.